International Journal of Advance Research Publication and Reviews

International Journal of Advance Research Publication and Reviews
Peer-Reviewed | Multi-Disciplinary Journal

NUMERICAL INVESTIGATION OF WS2 AS A BUFFER LAYER IN CIGS SOLAR CELLS USING SCAPS-1D

Author

Muhammad Khadijah Rabiu, Babaji Garba

Abstract

 In this study, the performance of CuInGaSe2 (CIGS) thin-film solar cells was evaluated using tungsten disulfide (WS2) as an alternative to the conventional cadmium sulfide (CdS) buffer layer. Simulations were performed using SCAPS-1D under AM1.5G illumination and a temperature of 300 K. First, the CIGS solar cell with a CdS buffer was validated against a reference, yielding Voc = 0.694 V, Jsc = 34.05 mA/cm2, FF = 78.93%, and PCE = 18.66%. The CdS buffer layer was then replaced with a WS2 buffer, and systematic optimization of its electron affinity, thickness, donor density, and interface defect density was carried out. The optimized WS2 device achieved a PCE of 18.80%, Voc = 0.694 V, Jsc = 34.2 mA/cm2, and FF = 79.2%. WS2 demonstrated greater interface defect tolerance, making it a strong candidate for an environmentally sustainable CIGS solar cell without toxic cadmium.

Keywords

Buffer, CdS, CIGS, Electron affinity, WS2

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References

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